Factory Lead Time  

10 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

8-PowerWDFN

Number of Pins  

8

Weight  

210mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

42W Tc

Turn Off Delay Time  

19 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

QFET®

Published  

2006

JESD-609 Code  

e4

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

5

ECCN Code  

EAR99

Resistance  

1.5Ohm

Terminal Finish  

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Voltage - Rated DC  

-150V

Terminal Position  

DUAL

Terminal Form  

FLAT

Current Rating  

-3A

JESD-30 Code  

S-PDSO-F5

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

42W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

270pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

9nC @ 10V

Rise Time  

11ns

Drain to Source Voltage (Vdss)  

150V

Vgs (Max)  

±30V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

3A

Threshold Voltage  

3.8V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

3A

Drain to Source Breakdown Voltage  

-150V

Max Junction Temperature (Tj)  

150°C

Height  

800μm

Length  

3mm

Width  

3mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free